Panasonic 2SA2162 User Manual download pdf

Transistors

Publication date : December 2004 SJC00323AED 1

2SA2162

Silicon PNP epitaxial planar type

For general ampliﬁcation

Complementary to 2SC6036

 Features

 Low collector-emitter saturation voltage V

CE(sat)

 SSS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing

 Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

–15 V

Collector-emitter voltage (Base open) V

CEO

–12 V

Emitter-base voltage (Collector open) V

EBO

–5 V

Collector current I

–500 mA

Peak collector current I

–1 A

Collector power dissipation P

100 mW

Junction temperature T

125

°C

Storage temperature T

stg

–55 to +125

°C

 Electrical Characteristics T

= 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= –10 µA, I

= 0 –15 V

Collector-emitter voltage (Base open) V

CEO

= –1 mA, I

= 0 –12 V

Emitter-base voltage (Collector open) V

EBO

= –10 µA, I

= 0 –5 V

Collector-base cutoff current (Emitter open) I

CBO

= –10 V, I

= 0 – 0.1

µA

Forward current transfer ratio h

= –2 V, I

= –10 mA 270 680



Collector-emitter saturation voltage V

CE(sat)

= –200 mA, I

= –10 mA –250 mV

Transition frequency f

= –2 V, I

= 10 mA, f = 200 MHz 200 MHz

Collector output capacitance

(Common base, input open circuited)

= –10 V, f = 1 MHz 4.5 pF

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Unit: mm

1: Base

2: Emitter

3: Collecter SSSMini3-F1 Package

1.20±0.05

0.52±0.03

0 to 0.01

0.15 max.

5°

0.15 min.

0.80±0.050.15 min.

0.33

(0.40)(0.40

)

1 2

5°

0.80±0.05

1.20

±0.05

+0.05

−0.02

0.10

+0.05

−0.02

0.23

+0.05

−0.02

Marking Symbol : 2U

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Transistors 1
2SA2162 2

Summary of Contents

Page 1 - Transistors

Transistors Publication date : December 2004 SJC00323AED 12SA2162Silicon PNP epitaxial planar typeFor general ampliﬁcationComplementary to 2SC6036

Page 2 - 2SA2162

2SA2162 2 SJC00323AED PC  Ta IC  VCE IC  VBE VCE(sat)  IC hFE  IC Cob  VCB020406080100120 1400204060801001202SA2162_ PC-TaCollector powe

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic 2SA2162 User Manual

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