Panasonic 2SC2631 User Manual download pdf

Transistors

Publication date: March 2003 SJC00117BED

2SC2631

Silicon NPN epitaxial planar type

For low-frequency high breakdown voltage amplification

Complementary to 2SA1123

■ Features

• Satisfactory linearity of forward current transfer ratio h

• High collector-emitter voltage (Base open) V

CEO

• Small collector output capacitance (Common base, input open cir-

cuited) C

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

150 V

Collector-emitter voltage (Base open) V

CEO

150 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

50 mA

Peak collector current I

100 mA

Collector power dissipation P

750 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

CEO

= 100 µA, I

= 0 150 V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 05V

Collector-base cutoff current (Emitter open)

CBO

= 100 V, I

= 01µA

Forward current transfer ratio

= 5 V, I

= 10 mA 130 330 

Collector-emitter saturation voltage V

CE(sat)

= 30 mA, I

= 3 mA 1 V

Transition frequency f

= 10 V, I

= −10 mA, f = 200 MHz 160 MHz

Collector output capacitance C

= 10 V, I

= 0, f = 1 MHz 3 pF

(Common base, input open circuited)

Noise voltage NV V

= 10 V, I

= 1 mA, G

= 80 dB 150 300 mV

= 100 kΩ, Function = FLAT

■ Electrical Characteristics T

= 25°C ± 3°C

5.0

±0.2

0.7

±0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

123

+0.6

–0.2

4.0

±0.2

5.1

±0.2

12.9

±0.5

2.3

±0.2

0.7

±0.2

Unit: mm

1: Emitter

2: Collector

3: Base

EIAJ: SC-43A

TO-92-B1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

Rank R S

130 to 220 185 to 330

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Transistors 1
Transition frequency f 2

Summary of Contents

Page 1 - Transistors

Transistors1Publication date: March 2003 SJC00117BED2SC2631Silicon NPN epitaxial planar typeFor low-frequency high breakdown voltage amplificationComp

Page 2 - Transition frequency f

2SC26312SJC00117BEDhFE  ICfT  IECob  VCBPC  TaIC  VBEVCE(sat)  IC0 16040 1208001.00.80.60.40.2Collector power dissipation PC (W)Ambient temper

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic 2SC2631 User Manual

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