Panasonic 2SC3130 User Manual download pdf

Transistors

Publication date: February 2003 SJC00125BED

2SC3130

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing

■ Features

• High transition frequency f

• Small collector output capacitance (Common base, input open cir-

cuited) C

and reverse transfer capacitance (Common emitter) C

• Mini type package, allowing downsizing of the equipment and au-

tomatic insertion through the tape packing and the magazine pack-

ing

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

15 V

Collector-emitter voltage (Base open) V

CEO

10 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

50 mA

Collector power dissipation P

150 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

CEO

= 2 mA, I

= 010V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 03V

Collector-base cutoff current (Emitter open)

CBO

= 10 V, I

= 01µA

Forward current transfer ratio

= 4 V, I

= 5 mA 75 220 

ratio

∆h

FE2

: V

= 4 V, I

= 100 µA 0.75 1.60 

FE1

: V

= 4 V, I

= 5 mA

Collector-emitter saturation voltage V

CE(sat)

= 20 mA, I

= 4 mA 0.5 V

Transition frequency f

= 4 V, I

= −5 mA, f = 200 MHz 1.4 1.9 2.5 GHz

Collector output capacitance C

= 4 V, I

= 0, f = 1 MHz 1.4 pF

(Common base, input open circuited)

Reverse transfer capacitance C

= 4 V, I

= 0, f = 1 MHz 0.45 pF

(Common emitter)

Collector-base parameter r

' • C

= 4 V, I

= −5 mA, f = 31.9 MHz 11 ps

■ Electrical Characteristics T

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

1: Rank classification

0.40

+0.10

–0.05

(0.65)

1.50

+0.25

–0.05

2.8

+0.2

–0.3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±0.2

5˚

10˚

0 to 0.1

1.1

+0.2

–0.1

1.1

+0.3

–0.1

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

Rank P Q

75 to 130 110 to 220

Marking Symbol: 1S

2: ∆h

= h

FE2

FE1

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Summary of Contents

Page 1 - Transistors

Transistors1Publication date: February 2003 SJC00125BED2SC3130Silicon NPN epitaxial planar typeFor high-frequency amplification/oscillation/mixing Fe

Page 2 - Collector output capacitance

2SC31302SJC00125BEDVCE(sat)  IChFE  ICfT  IEPC  TaIC  VCEIC  VBECob  VCB0 16040 1208002001601208040Collector power dissipation PC (mW)Ambient

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic 2SC3130 User Manual

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