Panasonic 2SD0965 User Manual download pdf

Transistors

Publication date: January 2003 SJC00200BED

2SD0965 (2SD965)

Silicon NPN epitaxial planar type

For low-frequency power amplification

For stroboscope

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• Satisfactory operation performances at high efficiency with the low-

voltage power supply.

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

40 V

Collector-emitter voltage (Base open) V

CEO

20 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

Peak collector current I

Collector power dissipation P

750 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

CEO

= 1 mA, I

= 020V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 07V

Collector-base cutoff current (Emitter open)

CBO

= 10 V, I

= 0 0.1 µA

Collector-emitter cutoff current (Base open)

CEO

= 10 V, I

= 01µA

Emitter-base cutoff current (Collector open)

EBO

= 7 V, I

= 0 0.1 µA

Forward current transfer ratio h

FE1

= 2 V, I

= 0.5 A 230 600 

FE2

= 2 V, I

= 1 A 150

Collector-emitter saturation voltage V

CE(sat)

= 3 A, I

= 0.1 A 0.28 1.00 V

Transition frequency f

= 6 V, I

= −50 mA, f = 200 MHz 150 MHz

Collector output capacitance C

= 20 V, I

= 0, f = 1 MHz 26 50 pF

(Common base, input open circuited)

■ Electrical Characteristics T

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

5.0

±0.2

0.7

±0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

123

+0.6

–0.2

4.0

±0.2

5.1

±0.2

12.9

±0.5

2.3

±0.2

0.7

±0.2

1: Emitter

2: Collector

3: Base

TO-92-B1 Package

Rank Q R

FE1

230 to 380 340 to 600

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Summary of Contents

Page 1 - 2SD0965 (2SD965)

Transistors1Publication date: January 2003 SJC00200BED2SD0965 (2SD965)Silicon NPN epitaxial planar typeFor low-frequency power amplificationFor strobo

Page 2 - Collector current I

2SD09652SJC00200BEDVCE(sat)  ICVBE(sat)  IChFE  ICPC  TaIC  VCEIC VBEfT  IECob  VCBSafe operation area0 16040 12080 14020 1006001 000800600400

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic 2SD0965 User Manual

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