Panasonic 2SD1820G User Manual download pdf

Transistors

Publication date: May 2007 SJC00373AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1820G

Silicon NPN epitaxial planar type

For general amplification

Complementary to 2SB1219G

■ Features

• Low collector-emitter saturation voltage V

CE(sat)

• S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

■ Absolute Maximum Ratings T

= 25°C

■ Electrical Characteristics T

= 25°C ± 3°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

1: Pulse measurement

2: Rank classification

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

60 V

Collector-emitter voltage (Base open) V

CEO

50 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

500 mA

Peak collector current I

Collector power dissipation P

150 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= 10 µA, I

= 060V

Collector-emitter voltage (Base open) V

CEO

= 2 mA, I

= 050V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 05V

Collector-base cutoff current (Emitter open)

CBO

= 20 V, I

= 0 0.1 µA

Forward current transfer ratio

FE1

= 10 V, I

= 150 mA 85 340 

FE2

= 10 V, I

= 500 mA 40

Collector-emitter saturation voltage

CE(sat)

= 300 mA, I

= 30 mA 0.35 0.60 V

Transition frequency

= 10 V, I

= −50 mA, f = 200 MHz 200 MHz

Collector output capacitance C

= 10 V, I

= 0, f = 1 MHz 6 15 pF

(Common base, input open circuited)

Rank Q R S No-rank

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Marking symbol XQ XR XS X

Product of no-rank is not classified and have no marking symbol for rank.

■ Package

•

Code

SMini3-F2

•

Marking Symbol: X

•

Pin Name

1: Base

2: Emitter

3: Collector

1 2 3 4

2SD1820G 1
SMini3-F2 Unit: mm 3

Summary of Contents

Page 1 - 2SD1820G

Transistors1Publication date: May 2007 SJC00373AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SD1820GSilicon NPN epitaxial planar t

Page 2

2SD1820G2SJC00373AEDThis product complies with the RoHS Directive (EU 2002/95/EC).VCE(sat)  ICVBE(sat)  IChFE  ICPC  TaIC  VCEIC  IBfT  IECob 

Page 3 - SMini3-F2 Unit: mm

This product complies with the RoHS Directive (EU 2002/95/EC).SMini3-F2 Unit: mm0.30+0.05−0.020.13+0.05−0.022.00 ±0.20(0.89)0.90 ±0.10(0.65)(0.65)

Page 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic 2SD1820G User Manual

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