Schottky Barrier Diodes (SBD)
Publication date: September 2006 SKH00154AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon epitaxial planar type
Allowing low-profi le mounting
Allowing low-profi le mounting
Forward current (Average) I
Forward current (Average) I
= 3 A rectifi cation is possible
Low forward voltage V
F
Low forward voltage V
Absolute Maximum Ratings
Maximum peak reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current
1: Mounted on an alumina PC board
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
Electrical Characteristics
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
: Mounted on an alumina PC board
Unit: mm
1: Anode
2: Cathode TMiniP2-F1 Package
2.40
±0.10
0.15
±0.05
1
2
1.75±0.05
4.70
±0.10
3.80±0.050.450±0.05
5°
0 to 0.40
0 to 0.03
0.90MAX
5°
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