Panasonic MA24D52 User Manual download pdf

Schottky Barrier Diodes (SBD)

Publication date: March 2007 SKH00159AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

MA24D52

Silicon epitaxial planar type

For rectiﬁcation

 Features

 Forward current (Average) I

F(AV)

= 3.0 A rectiﬁcation is possible

 Extremely small reverse current I

 Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Reverse voltage V

40 V

Maximum peak reverse voltage V

40 V

Forward current (Average)

F(AV)

3.0 A

Non-repetitive peak forward surge

current

FSM

60 A

Junction temperature T

150

°C

Storage temperature T

stg

-40 to +150

°C

Note)

: 50 Hz sine wave 1 cycle (Non-repetitive peak current)

 Electrical Characteristics T

= 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward current V

= 3.0 A 0.48 0.53 V

Reverse current I

= 40 V 50

Terminal capacitance C

= 10 V, f = 1 MHz 75 pF

Reverse recovery time

= I

= 100 mA, I

= 10 mA

= 100 W

25 ns

Thermal resistance

th(j-a)

°C/W

th(j-a)

210

th(j-l)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage

of current from the operating equipment.

1: t

test Circuit

Bias Application Unit (N-50BU)

90%

Pulse Generator

(PG-10N)

= 50 Ω

Wave Form Analyzer

(SAS-8130)

= 50 Ω

= 2 µs

= 0.35 ns

δ = 0.05

= I

= 100 mA

= 100 Ω

10%

Input Pulse Output Pulse

= 10 mA

2: Mounted on an alumina PC board (board: 50 mm × 50 mm × 0.8 t, soldering land: 1.4 mm × 2.1 mm)

3: With a glass epoxy PC board (board: 50 mm × 20 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)

Unit: mm

1: Anode

2: Cathode TMiniP2-F1 Package

2.40±0.10 0.15±0.05

1.75±0.05

4.70±0.10

3.80±0.050.450±0.05

5°

0 to 0.40

0 to 0.03

0.90 max.

5°

Marking Symbol: 5T

1 2

Silicon epitaxial planar type 1

Summary of Contents

Page 1 - Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) Publication date: March 2007 SKH00159AED 1 This product complies with the RoHS Directive (EU 2002/95/EC).MA24D52Silic

Page 2

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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