Panasonic MA26111 User Manual

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This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
Publication date: May 2005 SKF00068AED
1
MA26111
Silicon epitaxial planar type
For switching circuits
Features
Allowing high-density mounting
Allowing high-density mounting
Short reverse recovery time t
Short reverse recovery time t
rr
Short reverse recovery time t
rr
Short reverse recovery time t
Small terminal capacitance C
Small terminal capacitance C
t
High breakdown voltage: V
High breakdown voltage: V
R
High breakdown voltage: V
R
High breakdown voltage: V
= 80 V
R
= 80 V
R
Absolute Maximum Ratings
Absolute Maximum Ratings
T
a
= 25
a
= 25
a
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
V
RM
V
80
V
Forward current
I
F
100
mA
Peak forward current
I
FM
225
mA
Non-repetitive peak forward surge current
*
I
FSM
500
mA
Junction temperature
T
j
T
j
T
125
°
C
Storage temperature
T
stg
T
stg
T
55 to +125
°
C
Note)
*
: t = 1 s
Electrical Characteristics
Electrical Characteristics
T
a
= 25
a
= 25
a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
F
V
I
F
= 100 mA
0.95
1.2
V
Reverse voltage
V
R
V
R
V
I
R
= 100
R
= 100
R
µ
A
80
V
Reverse current
I
R
V
R
= 75 V
R
= 75 V
R
100
nA
Terminal capacitance
C
t
V
R
= 0, f = 1 MHz
R
= 0, f = 1 MHz
R
0.6
2
pF
Reverse recovery time
*
t
rr
t
rr
t
I
F
= 10 mA, V
R
= 6 V, I
R
= 6 V, I
R
rr
= 0.1 I
rr
= 0.1 I
rr
R
,
R
,
R
R
L
R
L
R
= 100
L
= 100
L
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. .
*
: t
rr
measurement circuit
rr
measurement circuit
rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Wa
ve Form Analyzer
(SAS-8130)
R
i
=
50
t
p
t
p
t
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6
V
R
L
=
100
10%
Input Pulse
Output Pulse
I
rr
=
0.1
I
R
t
r
t
p
t
p
t
t
rr
V
R
I
F
t
t
A
A
Marking Symbol: 1
Unit: mm
1: Anode
2: Cathode ML-2-N1 Package
0.60±0.05
1.00±0.05
12
0.39
+0.01
0.03
0.25±0.05
0.25±0.05
0.50±0.05
0.65±0.01
1
0.05±0.03
0.05±0.03
2
0.01±0.005
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Summary of Contents

Page 1 - Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).Switching Diodes Publication date: May 2005 SKF00068AED 1MA26111Silicon epitaxial plana

Page 2

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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