Panasonic MA26P02 User Manual download pdf

Publication date: May 2005 SKL00019AED

PIN diodes

MA26P02

Silicon epitaxial planar type

For high frequency switch



Features

 Features



Small terminal capacitance C

 Small terminal capacitance C



Low forward dynamic resistance r

 Low forward dynamic resistance r

Low forward dynamic resistance r



Miniature package and surface mounting type

 Miniature package and surface mounting type



Absolute Maximum Ratings

 Absolute Maximum Ratings 

= 25

Parameter

Symbol

Rating

Unit

Reverse voltage

Forward current

100

Junction temperature

150

Storage temperature

stg

–55 to +150



Electrical Characteristics

 Electrical Characteristics 

= 25

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

= 10 mA

1.0

Reverse current

= 60 V

100

Terminal capacitance

= 1 V, f = 1 MHz

0.5

Forward dynamic resistance

= 10 mA, f = 100 MHz

2.0

Ω

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

Marking Symbol: P2

Unit: mm

1: Anode

2: Cathode ML-2-N1 Package

0.60±0.05

1.00±0.05

0.39

+0.01

−0.03

0.25±0.05

0.50±0.05

0.65±0.01

0.05±0.03

0.01±0.005

This product complies with the RoHS Directive (EU 2002/95/EC).

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Silicon epitaxial planar type 1

Summary of Contents

Page 1 - Silicon epitaxial planar type

Publication date: May 2005 SKL00019AED 1PIN diodes MA26P02Silicon epitaxial planar typeFor high frequency switch Features Features Small terminal

Page 2

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic MA26P02 User Manual

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