Panasonic MA27P01 User Manual

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Publication date: March 2004 SKL00007BED
PIN diodes
MA27P01
Silicon epitaxial planar type
For high frequency switch
Features
Small terminal capacitance C
t
Small forward dynamic resistance r
f
Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
60 V
Forward current I
F
100 mA
Power dissipation
*
P
D
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Marking Symbol: N
1: Anode
2: Cathode
SSSMini2-F2 Package
5°
5°
0.27
2
1
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.0.15 max.
+0.05
–0.02
0.13
+0.05
–0.02
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 mA 1.0 V
Reverse current I
R
V
R
= 60 V 100 nA
Terminal capacitance C
t
V
R
= 1 V, f = 1 MHz 0.8 pF
Forward dynamic resistance
*
r
f
I
F
= 10 mA, f = 100 MHz 1.0
Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
:r
f
measurement device ; agilent model 4291B
Note)
*
: With a glass epoxy PC board
This product complies with the RoHS Directive (EU 2002/95/EC).
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Summary of Contents

Page 1 - Silicon epitaxial planar type

1Publication date: March 2004 SKL00007BEDPIN diodesMA27P01Silicon epitaxial planar typeFor high frequency switch Features• Small terminal capacitance

Page 2 - Reverse current I

MA27P012SKL00007BEDIF  VFIR  VRCt  VRrf  IF10−20 0.2 0.4 0.6 0.8 1.0 1.210−1110102103Forward voltage VF (V)Forward current IF (mA)Ta = 150°C−2

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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