Panasonic MA27P010G User Manual

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Publication date: October 2007 SKL00022AED
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27P010G
Silicon epitaxial planar type
For high frequency switch
Features
Small terminal capacitance C
t
Small forward dynamic resistance r
f
Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
60 V
Forward current I
F
100 mA
Power dissipation
*
P
D
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 mA 1.0 V
Reverse current I
R
V
R
= 60 V 100 nA
Terminal capacitance C
t
V
R
= 1 V, f = 1 MHz 0.8 pF
Forward dynamic resistance
*
r
f
I
F
= 10 mA, f = 100 MHz 1.0
Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
:r
f
measurement device ; agilent model 4291B
Note)
*
: With a glass epoxy PC board
Package
Code
SSSMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: N
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Summary of Contents

Page 1 - MA27P010G

1Publication date: October 2007 SKL00022AEDPIN diodesThis product complies with the RoHS Directive (EU 2002/95/EC).MA27P010GSilicon epitaxial planar t

Page 2

MA27P010G2SKL00022AEDThis product complies with the RoHS Directive (EU 2002/95/EC).IF  VFIR  VRCt  VRrf  IF10−20 0.2 0.4 0.6 0.8 1.0 1.210−1110102

Page 3 - SSSMini2-F3

MA27P010G3SKL00022AEDThis product complies with the RoHS Directive (EU 2002/95/EC).SSSMini2-F3Unit: mm1.40 ±0.050.27+0.05−0.03210.60 ±0.051.00 ±0.050.

Page 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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