Panasonic MA27P120G User Manual

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PIN diodes
Publication date: October 2007 SKL00027AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA27P120G
Silicon planar type
For high frequency switch
Features
Small terminal capacitance C
t
Low forward dynamic resistance r
f
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
60 V
Forward current I
F
100 mA
Power dissipation
*
P
D
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Note)
*
: With a glass epoxy PC board.
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current V
F
I
F
= 10 mA 1.0 V
Reverse current I
R
V
R
= 60 V 100 nA
Terminal capacitance C
t
V
R
= 1 V, f = 1 MHz 0.27 pF
Forward dynamic resistance
*
r
f
I
F
= 10 mA, f = 100 MHz 0.8
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
: r
f
measurement device: agilent model 4291B
Package
Code
SSSMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: U
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Summary of Contents

Page 1 - MA27P120G

PIN diodes Publication date: October 2007 SKL00027AED 1 This product complies with RoHS Directive (EU 2002/95/EC).MA27P120GSilicon planar typeFor h

Page 2

MA27P120G 2 SKL00027AED SKL00027AED This product complies with RoHS Directive (EU 2002/95/EC). IF  VF IR  VR Ct  VR rf  IF0.40.6 0.8 1.010−

Page 3 - SSSMini2-F3 Unit: mm

MA27P120G SKL00027AED 3 This product complies with RoHS Directive (EU 2002/95/EC).SSSMini2-F3 Unit: mm1.40 ±0.050.27+0.05−0.03210.60 ±0.051.00 ±0

Page 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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