Panasonic 2SC4808G User Manual download pdf

Transistors

Publication date: May 2007 SJC00395AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC4808G

Silicon NPN epitaxial planar type

For UHF band low-noise amplification

■ Features

• Low noise figure NF

• High forward transfer gain S

21e



• High transition frequency f

• SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing.

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= 10 µA, I

= 015V

Collector-emitter voltage (Base open) V

CEO

= 100 µA, I

= 010 V

Collector-base cutoff current (Emitter open)

CBO

= 10 V, I

= 01µA

Emitter-base cutoff current (Collector open)

EBO

= 2 V, I

= 01µA

Forward current transfer ratio

= 8 V, I

= 20 mA 50 150 300 

Transition frequency f

= 8 V, I

= 15 mA, f = 0.8 GHz 5 6 GHz

Collector output capacitance C

= 10 V, I

= 0, f = 1 MHz 0.7 1.2 pF

(Common base, input open circuited)

Forward transfer gain S

21e



= 8 V, I

= 15 mA, f = 0.8 GHz 11 14 dB

Maximum unilateral power gain G

= 8 V, I

= 15 mA, f = 0.8 GHz 15 dB

Noise figure NF V

= 8 V, I

= 7 mA, f = 0.8 GHz 1.3 2.0 dB

■ Electrical Characteristics T

= 25°C ± 3°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

15 V

Collector-emitter voltage (Base open) V

CEO

10 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

80 mA

Collector power dissipation P

125 mW

Junction temperature T

125 °C

Storage temperature T

stg

−55 to +125 °C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Pulse measurement

■ Package

• Code

SSMini3-F3

• Marking Symbol: 3M

• Pin Name

1. Base

2. Emitter

3. Collector

1 2 3 4

2SC4808G 1
SSMini3-F3 Unit: mm 3

Summary of Contents

Page 1 - 2SC4808G

Transistors1Publication date: May 2007 SJC00395AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SC4808GSilicon NPN epitaxial planar t

Page 2

2SC4808G2SJC00395AEDThis product complies with the RoHS Directive (EU 2002/95/EC).VCE(sat)  IChFE  ICCob  VCBPC  TaIC  VCEIC  VBE040801200204060

Page 3 - SSMini3-F3 Unit: mm

This product complies with the RoHS Directive (EU 2002/95/EC).SSMini3-F3 Unit: mm1.00 ±0.05(0.50) (0.50)1.60+0.05−0.030.26+0.05−0.021230.85+0.05−0

Page 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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