Panasonic 2SD1149 User Manual download pdf

Transistors

Publication date: January 2003 SJC00208BED

2SD1149

Silicon NPN epitaxial planar type

For low-frequency amplification

■ Features

• High forward current transfer ratio h

• Low collector-emitter saturation voltage V

CE(sat)

• High emitter-base voltage (Collector open) V

EBO

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

100 V

Collector-emitter voltage (Base open) V

CEO

100 V

Emitter-base voltage (Collector open) V

EBO

15 V

Collector current I

20 mA

Peak collector current I

50 mA

Collector power dissipation P

200 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= 10 µA, I

= 0 100 V

Collector-emitter voltage (Base open) V

CEO

= 1 mA, I

= 0 100 V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 015V

Collector-base cutoff current (Emitter open)

CBO

= 60 V, I

= 0 0.1 µA

Collector-emitter cutoff current (Base open)

CEO

= 60 V, I

= 0 1.0 µA

Forward current transfer ratio

= 10 V, I

= 2 mA 400 1

200 

Collector-emitter saturation voltage V

CE(sat)

= 10 mA, I

= 1 mA 0.05 0.20 V

Transition frequency f

= 10 V, I

= −2 mA, f = 200 MHz 100 MHz

■ Electrical Characteristics T

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

0.40

+0.10

–0.05

(0.65)

1.50

+0.25

–0.05

2.8

+0.2

–0.3

(0.95) (0.95)

1.9

±0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±0.2

5˚

10˚

0 to 0.1

1.1

+0.2

–0.1

1.1

+0.3

–0.1

1 : Base

2 : Emitter

3 : Collector

EIAJ : SC-59

Mini3-G1 Package

Rank R S

400 to 800 600 to 1

200

Marking symbol： 1V

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Transistors 1
Collector current I 2

Summary of Contents

Page 1 - Transistors

Transistors1Publication date: January 2003 SJC00208BED2SD1149Silicon NPN epitaxial planar typeFor low-frequency amplification Features• High forward

Page 2 - Collector current I

2SD11492SJC00208BEDVCE(sat)  IChFE  ICfT  IEPC  TaIC  VCEIC  VBECob  VCBNV  ICNV  VCE0 16040 1208002402001601208040Collector power dissipatio

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

Comments to this Manuals

No comments

Panasonic 2SD1149 User Manual

Browse online or download User Manual for Hardware Panasonic 2SD1149. Panasonic 2SD1149 User Manual

Summary of Contents

Comments to this Manuals

Related products and manuals for Hardware Panasonic 2SD1149