Panasonic MA27D29 User Manual download pdf

Schottky Barrier Diodes (SBD)

Publication date: January 2004 SKH00128BED

MA27D29

Silicon epitaxial planar type

For super high speed switching

■ Features

• Low forward voltage: V

< 0.42 V (at I

= 100 mA)

• Optimum for high frequency rectification because of its short

reverse recovery time t

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Reverse voltage V

30 V

Repetitive peak reverse voltage V

RRM

30 V

Forward current (Average) I

F(AV)

100 mA

Peak forward current I

200 mA

Non-repetitive peak forward I

FSM

surge current

Junction temperature T

125 °C

Storage temperature T

stg

−55 to +125 °C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

= 10 mA 0.25 0.29 V

= 100 mA 0.39 0.42 V

Reverse current I

= 10 V 25 µA

= 30 V 120 µA

Terminal capacitance C

= 0 V, f = 1 MHz 11 pF

Reverse recovery time

= I

= 100 mA 1 ns

= 10 mA, R

= 100 Ω

■ Electrical Characteristics T

25°C ±

3°C

Marking Symbol: 8M

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz

: t

measurement circuit

1: Anode

2: Cathode

SSSMini2-F2 Package

Note)

The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

90%

= 2 µs

= 0.35 ns

δ = 0.05

= 100 mA

= 100 Ω

10%

Input Pulse Output Pulse

= 10 mA

Bias Application Unit (N-50BU)

Pulse Generator

(PG-10N)

= 50 Ω

Wave Form

Analyzer

(SAS-8130)

= 50 Ω

5°

0.27

1.40±0.05

0.52±0.03

1.00±0.05

0.60±0.05

0.20±0.05

0 to 0.01

0.20

±0.050.15 max.

+0.05

–0.02

0.12

+0.05

–0.02

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Summary of Contents

Page 1 - Silicon epitaxial planar type

Schottky Barrier Diodes (SBD)1Publication date: January 2004 SKH00128BEDMA27D29Silicon epitaxial planar typeFor super high speed switching Features•

Page 2 - Reverse voltage V

2MA27D29SKH00128BEDIF  VFIR  VRCt  VR10−30 0.1 0.2 0.3 0.4 0.5 0.610−210−1110102103Forward voltage VF (V)Forward current IF (mA)Ta = 125°C25°C−

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic MA27D29 User Manual

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