Panasonic 2SC3312 User Manual download pdf

Transistors

Publication date: March 2003 SJC00128BED

2SC3312

Silicon NPN epitaxial planar type

For low-frequency and low-noise amplification

Complementary to 2SA1310

■ Features

• Optimum for high-density mounting

• Allowing supply with the radial taping

• Low noise voltage NV

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

60 V

Collector-emitter voltage (Base open) V

CEO

55 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

100 mA

Peak collector current I

200 mA

Collector power dissipation P

300 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= 10 µA, I

= 060V

Collector-emitter voltage (Base open) V

CEO

= 2 mA, I

= 055V

Emitter-base voltage (Collector open) V

EBO

= 10 µA, I

= 07V

Base-emitter voltage V

= 1 V, I

= 30 mA 1 V

Collector-base cutoff current (Emitter open)

CBO

= 20 V, I

= 0 0.1 µA

Collector-emitter cutoff current (Base open)

CEO

= 20 V, I

= 01µA

Forward current transfer ratio

= 5 V, I

= 2 mA 180 700 

Collector-emitter saturation voltage V

CE(sat)

= 100 mA, I

= 10 mA 1 V

Transition frequency f

= 5 V, I

= −2 mA, f = 200 MHz 200 MHz

Noise voltage NV V

= 10 V, I

= 1 mA, G

= 80 dB 150 mV

= 100 kΩ, Function = FLAT

■ Electrical Characteristics T

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Rank classification

Rank R S T

180 to 360 260 to 520 360 to 700

4.0±0.2

0.75 max.

2.0

±0.2

0.45

(2.5) (2.5)

0.7

±0.1

231

+0.20

–0.10

0.45

+0.20

–0.10

7.6

3.0

±0.2

(0.8)(0.8)

15.6

±0.5

1: Emitter

2: Collector

3: Base

NS-B1 Package

This product complies with the RoHS Directive (EU 2002/95/EC).

1 2 3

Transistors 1
Collector current I 2

Summary of Contents

Page 1 - Transistors

Transistors1Publication date: March 2003 SJC00128BED2SC3312Silicon NPN epitaxial planar typeFor low-frequency and low-noise amplificationComplementary

Page 2 - Collector current I

2SC33122SJC00128BEDVCE(sat)  IChFE  ICfT  IEPC  TaIC  VCEIC  VBECob  VCBNV  IC0 16040 120800500400300200100Collector power dissipation PC (m

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

Comments to this Manuals

No comments

Panasonic 2SC3312 User Manual

Browse online or download User Manual for Hardware Panasonic 2SC3312. Panasonic 2SC3312 User Manual

Summary of Contents

Comments to this Manuals

Related products and manuals for Hardware Panasonic 2SC3312