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Panasonic MA22D17 User Manual

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Schottky Barrier Diodes (SBD)
Publication date: December 2004 SKH00140AED
1
MA22D17
Silicon epitaxial planar type
For high frequency rectifi cation
Features
Reverse voltage V
Reverse voltage V
R
Reverse voltage V
R
Reverse voltage V
= 100 V is guaranteed
R
= 100 V is guaranteed
R
High non-repetitive peak forward surge current: I
High non-repetitive peak forward surge current: I
FSM
= 20 A
FSM
= 20 A
FSM
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
100
V
Repetitive peak reverse voltage
V
RRM
V
RRM
V
100
V
Forward current (Average)
*
1
I
F(AV)
300
mA
Non-repetitive peak forward surge current
*
2
I
FSM
20
A
Junction temperature
T
j
T
j
T
125
°
C
Storage temperature
T
stg
T
stg
T
–55 to +125
°
C
Note)
*
1: Mounted on an alumina PC board
*
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
V
F
V
I
F
= 300 mA
0.49
0.57
V
Reverse current
I
R
V
R
= 100 V
R
= 100 V
R
70
200
µ
A
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
R
= 0 V, f = 1 MHz
R
100
pF
Reverse recovery time
*
t
rr
t
rr
t
I
F
= I
R
= 100 mA, I
R
= 100 mA, I
R
rr
= 10 mA,
rr
= 10 mA,
rr
R
L
R
L
R
= 100
L
= 100
L
Ω
7
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
: t
rr
measurement circuit
rr
measurement circuit
rr
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wa
ve Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
t
p
t
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
10 mA
t
r
t
p
t
p
t
t
rr
V
R
I
F
t
t
A
A
Unit: mm
1: Anode
2: Cathode Mini2-F1 Package
5°
1.6±0.1
1
2
0.80±0.05
0.55±0.1
0.16
+0.1
–0.06
3.5±0.1
2.6±0.1
0.45±0.1
5°
0 to 0.1
0 to 0.3
0 to 0.1
Marking Symbol: 3T
This product complies with the RoHS Directive (EU 2002/95/EC).
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Summary of Contents

Page 1 - Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) Publication date: December 2004 SKH00140AED 1MA22D17Silicon epitaxial planar typeFor high frequency rectifi cation Feat

Page 2

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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